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    PT8205 SOT-23-6L

    PT8205+TSSOP8

    PTW20N50

    Features
    ■ RDS(on) (Max 0.26 Ω )@VGS=10V
    ■ Gate Charge (Typical 90nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range (150°C)

    PTW9N90

    Features
    ■ RDS(on) (Max 1.4 Ω )@VGS=10V
    ■ Gate Charge (Typical 47nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range (150°C)

    PTU50N03

    60A , 25 V N-Channel MOSFET
    Features
    ●RDS(ON) = 5.2mΩ @VGS = 10 V
    ●Low capacitance
    ●Optimized gate charge
    ●Fast switching capability
    ●Avalanche energy specified

    PTU7N65

    650V N-Channe MOSFET

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 16 nC (Typ.)
    ●BVDSS=650V,ID=6.5A
    ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTU6N65

    650V N-Channe MOSFET

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 16 nC (Typ.)
    ●BVDSS=650V,ID=6A
    ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTU6N60

    600V N-Channe MOSFET

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 16 nC (Typ.)
    ●BVDSS=600V,ID=6A
    ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTU5N65

    650V N-Channel MOSFET

    Features
    ●Low Intrin sic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 15 nC (Typ.)
    ●BVDSS=650V,ID=4.5A
    ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTU2N80

    HIGH VOLTAGE N-Channel MOSFET
    600V N-Channel MOSFET

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge :12 nC (Typ.)
    ●BVDSS=800V,ID=2A
    ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTP9540

    P-Channel Enhancement Mode Power MOSFET
    Description
    The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

    General Features
    ● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
    ● Super high dense cell design
    ● Advanced trench process technology
    ● Reliable and rugged
    ● High density cell design for ultra low On-Resistance

    Application
    ● Portable equipment and battery powered systems

    PTP8580

    Description
    The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

    General Features
    ● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Special designed for convertors and power controls
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation
    ● Special process technology for high ESD capability

    Application
    ●Power switching application
    ●Hard switched and High frequency circuits
    ●Uninterruptible power supply

    PTP7190

    Description
    The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

    General Features
    ● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
    ● Special process technology for high ESD capability
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation

    Application
    ●Power switching application
    ●Hard switched and High frequency circuits
    ●Uninterruptible power supply

    PTP1579

    Description
    The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

    General Features
    ● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation
    ● Special process technology for high ESD capability

    Application
    ●Power switching application
    ●Hard switched and high frequency circuits
    ●Uninterruptible power supply

    PTP1550

    Description
    The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

    General Features
    ● VDS =150V,ID =50A
    RDS(ON) <23mΩ @ VGS=10V
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation
    ● Special process technology for high ESD capability

    Application
    ●Power switching application
    ●Hard switched and High frequency circuits
    ●Uninterruptible power supply

    PTF50M06

    Features
    ? 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
    ? Low gate charge ( typical 33nC)
    ? Fast switching
    ? 100% avalanche tested
    ? Improved dv/dt capability

    General Description
    This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
    especially designed to minimize on-state resistance, have a high
    rugged avalanche characteristics. These devices are well suited
    for high efficiency switch mode power supplies, active power
    factor correction, electronic lamp ballasts based on half bridge
    topology.

    PTP8N60

    Features
    ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
    ■ Gate charge (Typical 30nC)
    ■ High ruggedness
    ■ Fast switching
    ■ 100% AvalancheTested
    ■ Improved dv/dt capability

    General Description
    This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

    PTP5N65-E

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 15 nC (Typ.)
    ●BVDSS=650V,ID=4.5A
    ●Lower RDS(on) : 2.7Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTP2N80

    800V N-Channel MOSFET
    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge :Qg= 13nC (Typ.)
    ●BVDSS=800V,ID=3A
    ●RDS(on) : 5 Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTP01H11

    Description
    The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

    General Features
    ● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation
    ● Special process technology for high ESD capability

    Application
    ● Power switching application
    ● Hard switched and high frequency circuits
    ● Uninterruptible power supply

    PTP01H10

    Description
    The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    General Features

    ● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
    ● Special process technology for high ESD capability
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation

    Application
    ● Power switching application
    ● Hard switched and high frequency circuits
    ● Uninterruptible power supply

    PTF12N60

    Features
    ■ RDS(on) (Max 0.70 Ω )@VGS=10V
    ■ Gate Charge (Typical 50nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range (150°C)

    PTF10N65

    Features
    ■ RDS(on) (Typical 0.70 Ω )@VGS=10V
    ■ Gate Charge (Typical 45nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range (150°C)

    General Description
    This Power MOSFET is produced using Wisdom’s advanced
    planar stripe, DMOS technology. This latest technology has been
    especially designed to minimize on-state resistance, have a high
    rugged avalanche characteristics. These devices are well suited
    for high efficiency switch mode power supplies, active power factor
    correction, electronic lamp ballasts based on half bridge topology.

    PTF10N60

    Features
    10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
    Low gate charge ( typical 48nC)
    High ruggedness
    Fast switching
    100% avalanche tested
    Improved dv/dt capability

    PTF8N60

    Features
    ■ RDS(on) (Max 1.2 Ω )@VGS=10V
    ■ Gate Charge(Typical 28nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range(150°C)

    PTF5N60

    Features
    ■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
    ■ Gate charge (Typical 17nC)
    ■ High ruggedness
    ■Fast switching
    ■100% AvalancheTested
    ■Improved dv/dt capability

    General Description

    This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

    PTF3N80

    Features
    ■ RDS(on) (Max 5.0 Ω )@VGS=10V
    ■ Gate Charge(Typical 15.0nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■ Maximum Junction Temperature Range(150°C)

    PTD7580

    Description
    The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
    General Features
    ● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
    ● Special process technology for high ESD capability
    ● Special designed for convertors and power controls
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation

    Application
    ● Power switching application
    ● Hard switched and high frequency circuits
    ● Uninterruptible power supply

    PTD630

    200V N-Channel MOSFET
    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 22 nC (Typ.)
    ●BVDSS=200V,ID=9A
    ●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTD50N03

    60A , 25 V N-Channel MOSFET
    Features
    ●RDS(ON) = 5.2mΩ @VGS = 10 V
    ●Low capacitance
    ●Optimized gate charge
    ●Fast switching capability
    ●Avalanche energy specified

    PTD30P55

    DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    General Features
    ● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
    ● High density cell design for ultra low Rdson
    ● Fully characterized avalanche voltage and current
    ● Good stability and uniformity with high EAS
    ● Excellent package for good heat dissipation

    Application
    ●Power switching application
    ●Hard switched and high frequency circuits
    ●Uninterruptible power supply

    PTD7N65

    650V N-Channel MOSFET
    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 16 nC (Typ.)
    ●BVDSS=650V,ID=6.5A
    ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTD6N65

    650V N-Channel MOSFET
    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 16 nC (Typ.)
    ●BVDSS=650V,ID=6A
    ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTD6N60

    600V N-Channel MOSFET
    Features
    ● Low Intrinsic Capacitances
    ● Excellent Switching Characteristics
    ● Extended Safe Operating Area
    ● Unrivalled Gate Charge : 16 nC (Typ.)
    ● BVDSS=600V,ID=6A
    ● Lower RDS(on) : 1.5Ω (Max) @VG=10V
    ● 100% Avalanche Tested

    PTD5N65

    650V N-Channel MOSFET
    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge : 15 nC (Typ.)
    ●BVDSS=650V,ID=4.5A
    ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
    ●100% Avalanche Tested

    PTD5N50

    N-Channel MOSFET
    Features
    ■ RDS(on) (Max 1.5Ω) @ VGS=10V
    ■ GateCharge(Typical 20nC)
    ■ Improved dv/dt Capability, High Ruggedness
    ■ 100% Avalanche Tested
    ■MaximumJunctionTemperatureRange(150°C)

    PTD2N80

    HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

    Features
    ●Low Intrinsic Capacitances
    ●Excellent Switching Characteristics
    ●Extended Safe Operating Area
    ●Unrivalled Gate Charge :12 nC (Typ.)
    ●BVDSS=800V,ID=2A
    ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
    ●100% Avalanche Tested
    ?

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